By Norman G. Einspruch,Norman Einspruch
Comprised of 8 chapters, this quantity starts with a common photograph of MOS know-how improvement from the machine and processing issues of view. The serious factor of hot-carrier results is mentioned, in addition to the gadget engineering facets of this challenge; the rising low-temperature MOS expertise; and the matter of latchup in scaled MOS circuits. numerous gadget versions which are appropriate to be used in circuit simulators also are defined. The final bankruptcy examines novel electron shipping results saw in ultra-small MOS buildings.
This e-book may still end up worthy to semiconductor engineers thinking about diverse points of MOS know-how improvement, in addition to for researchers during this box and scholars of the corresponding disciplines.
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Advanced MOS Device Physics: 18 (V L S I Electronics) by Norman G. Einspruch,Norman Einspruch